New Energy IGBT Module 2MBI200U4B-120-50 Power Semiconductor

Name: New Energy IGBT Module 2MBI200U4B-120-50 Power Semiconductor
SKU: 6a2e20a5efdf17014decd3af
Price: 2611 CZK
Availability: InStock

Aktuální cena

Cena 2 611 Kč

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Basic Version
Enhanced Version

Doručení do ČR 🇨🇿

6–11 pracovních dnů · 85 Kč

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Čína

Popis

The New Energy IGBT Module 2MBI200U4B-120-50 Power Semiconductor is a versatile and efficient component designed for high-performance electronic applications. It features advanced Insulated Gate Bipolar Transistor (IGBT) technology, offering reliable and efficient power conversion. With a current rating of 200A and a voltage capacity of 1200V, this module is ideal for use in high-power, industrial-grade systems, ensuring robust performance and enhanced energy efficiency. Its compact design allows for easy integration into various equipment, providing improved thermal management and durability under demanding conditions. Installation Type: Screw type Application Areas: Mechanical Equipment Manufacture country: China Instructions included: No

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